High-Fidelity Two-Qubit Quantum Gates in a Scalable Surface Ion Trap (Dr. P. Maunz)

Datum: 09.05.2016
Uhrzeit: 15:00 - 16:30
Vortragende(r): Dr. Peter Maunz, Sandia National Laboratories
Raum: Herbert Walther Lecture Hall
Gastgeber: MPQ, Quantum Dynamics Division

Microfabricated surface traps enable a wide range of trapping geometries and provide a scalable platform for trapped ion Quantum Information Processing (QIP).

However, the feasibility of using surface traps for QIP has been a point of contention because the close proximity of the ions to trap electrodes increases heating rates and might lead to laser-induced charging of the trap. Using Sandia’s High-Optical-Access surface trap, we demonstrate robust single-qubit gates, both laser- and microwave-based. Our gates are accurately characterized by Gate Set Tomography (GST) and we report the first diamond norm measurements below the fault-tolerance threshold [1]. Extending these techniques, we’ve realized a Mølmer-Sørensen two-qubit gate that is stable for several hours. This stability has allowed us to perform the first GST measurements of a two-qubit gate, yielding a process fidelity of 99.58(6)%. These results demonstrate that surface traps form a viable way for scaling trapped ion QIP.

Reference:

[1] P. Aliferis and A. W. Cross, Phys. Rev. Lett. 98, 220502 (2007).