High-Fidelity Two-Qubit Quantum Gates in a Scalable Surface Ion Trap (Dr. P. Maunz)
- Date: May 9, 2016
- Time: 03:00 PM - 04:30 PM (Local Time Germany)
- Speaker: Dr. Peter Maunz, Sandia National Laboratories
- Room: Herbert Walther Lecture Hall
- Host: MPQ, Quantum Dynamics Division
However, the feasibility of using surface traps for QIP has been a point of contention because the close proximity of the ions to trap electrodes increases heating rates and might lead to laser-induced charging of the trap. Using Sandia’s High-Optical-Access surface trap, we demonstrate robust single-qubit gates, both laser- and microwave-based. Our gates are accurately characterized by Gate Set Tomography (GST) and we report the first diamond norm measurements below the fault-tolerance threshold [1]. Extending these techniques, we’ve realized a Mølmer-Sørensen two-qubit gate that is stable for several hours. This stability has allowed us to perform the first GST measurements of a two-qubit gate, yielding a process fidelity of 99.58(6)%. These results demonstrate that surface traps form a viable way for scaling trapped ion QIP.
Reference:
[1] P. Aliferis and A. W. Cross, Phys.
Rev. Lett. 98, 220502 (2007).